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STP20NE06 STP20NE06FP
N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FP STripFETTM POWER MOSFET
TYPE STP20NE06 STP20NE06FP
s s s s s
V DSS 60 V 60 V
R DS(on) < 0.080 < 0.080
ID 20 A 13 A
TYPICAL RDS(on) = 0.06 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION
1
3 2
1 2
3
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique " Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (*) P tot V ISO dv/dt Ts tg Tj June 1999 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at T c = 25 oC Derating F actor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 20 14 80 70 0.47 7 -65 to 175 175
( 1) ISD 20 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX
Value STP20NE06 STP20NE06FP 60 60 20 13 9 80 30 0.2 2000
Un it V V V A A A W W /o C V V/ns
o o
C C 1/9
(*) Pulse width limited by safe operating area
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STP20NE06/FP
THERMAL DATA
TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 2.14 62.5 0.5 300 TO-220FP 5
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 25V) Max Value 20 100 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 60 1 10 100 Typ. Max. Unit V A A nA
V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 20 V
T c = 125 oC
ON ()
Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10 V Test Con ditions ID = 250 A ID = 10 A 20 Min. 2 Typ. 3 0.060 Max. 4 0.080 Unit V A
V DS > ID(o n) x R DS(on )ma x V GS = 10 V
DYNAMIC
Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D =10 A V GS = 0 Min. 5 Typ. 9 900 125 35 Max. Unit S pF pF pF
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STP20NE06/FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 30 V I D = 10 A R G =4.7 V GS = 10 V (see test circuit, figure 3) V DD = 48 V I D = 20 A V GS = 10 V Min. Typ. 20 45 25 10 6 35 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 48 V I D = 20 A R G =4.7 V GS = 10 V (see test circuit, figure 5) Min. Typ. 8 25 37 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 20 A V GS = 0 50 115 4.5 I SD = 20 A di/dt = 100 A/s o Tj = 150 C V DD = 30 V (see test circuit, figure 5) Test Con ditions Min. Typ. Max. 20 80 1.5 Unit A A V ns nC A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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STP20NE06/FP
Thermal Impedance for TO-220 Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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STP20NE06/FP
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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STP20NE06/FP
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
E
mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
A
C
D1
L2 F1
D
G1
Dia. F2 F
L5 L7 L6
L9
L4
G
H2
P011C
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STP20NE06/FP
TO-220FP MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7 F1 F
D
G1
E
H
F2
123 L2 L4
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G
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STP20NE06/FP
Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com .
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